NDC7003P ,Dual P-Channel PowerTrench MOSFETFeatures These dual P-Channel Enhancement Mode Power Field • –0.34A, –60 V. R = 5 Ω @ V = –10 V DS ..
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NDC7003P
Dual P-Channel PowerTrench MOSFET
NDC7003P May 2002 NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field • –0.34A, –60 V. R = 5 Ω @ V = –10 V DS(ON) GS Effect Transistors are produced using Fairchild’s R = 7 Ω @ V = –4.5 V DS(ON) GS proprietary Trench Technology. This very high density process has been designed to minimize on-state • Low gate charge resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to • Fast switching speed low voltage applications requiring a low current high side switch. • High performance trench technology for low RDS(ON) TM • SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) D2 S1 4 3 D1 5 2 G2 6 1 S2 TM SuperSOT -6 G1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –60 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) –0.34 A D – Pulsed –1 Power Dissipation for Single Operation (Note 1a) 0.96 P W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 130 RθJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 60 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .03P NDC7003P 7’’ 8mm 3000 units 2002 NDC7003P Rev B(W)
