Partno |
Mfg |
Dc |
Qty |
Available | Descript |
NAND04GW3B2BN6E |
ST|ST Microelectronics |
N/a |
100 |
|
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories |
NAND04GW3B2DN6 ST
NAND04GW3B2DN6 Numonyx
NAND04GW3B2DN6E STM, 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
NAND04GW3B2DN6E NUMONYX, 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
NAND04GW3B2DZL6F ST, 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
NAND04GW3B2BN6E , 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
NAND08GAH0AZA5E , 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard™ interface
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NJM12902M , SINGLE SUPPLY QUAD AMPLIFIER
NJM12902V , SINGLE SUPPLY QUAD AMPLIFIER
NJM12902V , SINGLE SUPPLY QUAD AMPLIFIER