| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| N0413N |
NEC|NEC |
N/a |
10000 |
 |
N-CHANNEL MOSFET FOR SWITCHING |
N0414NQ NEC
N0415NQ NEC
N0416NQ-ZP NEC
N0417NQ NEC
N0418NQ NEC
N0419NQ-ZP NEC
N042 NEC
N0420NQ NEC
N0421NQ NEC
N0422NQ-ZP NEC
N0423NQ-ZP NEC
N0424NQ NEC
N0425NQ NEC
N0426NQ-ZP NEC
N0427NQ-ZP NEC
N0428NQ NEC
N0429NQ NEC
N0430NQ-ZP NEC
N0431NQ-ZP NEC
N0432NQ-ZK NEC
N0433NQ-ZK NEC
N0413N , N-CHANNEL MOSFET FOR SWITCHING
N0434N , N-CHANNEL MOSFET FOR SWITCHING
N04L163WC1AT-70I , 4Mb Ultra-Low Power Asynchronous CMOS SRAM
N0600N , MOS FIELD EFFECT TRANSISTOR
N0601N , N-CHANNEL MOSFET FOR SWITCHING
NE5500179A-T1 ,SILICON POWER MOS FETDATA SHEETSILICON POWER MOS FETNE5500179A4.8 V OPERATION SILICON RF POWER LD-MOS FETFOR 1.9 ..
NE5500179A-T1 ,SILICON POWER MOS FETFEATURES• High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = ..
NE5510279A-T1 ,3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers.FEATURES OUTLINE DIMENSIONS (Units in mm)• HIGH OUTPUT POWER:PACKAGE OUTLINE 79A32 dBm TYP at VDS = ..
