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MURB820IRN/a4800avai200V 8A HEXFRED Discrete Diode in a D2-Pak (UltraFast) package


MURB820 ,200V 8A HEXFRED Discrete Diode in a D2-Pak (UltraFast) packageApplicationsInternational Rectifier's MUR.. series are the state of the art Ultra fast recovery rec ..
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MURB820
200V 8A HEXFRED Discrete Diode in a D2-Pak (UltraFast) package
International
IéaR Rectifier
Bulletin PD-20731 reV.B 01/01
MUR820
MURB820
MURB820-1
Ultrafast Rectifier
Features
Ultrafast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
DescriptionIApplications
International Rectifier‘s MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
trr = 25ns
|F(AV) = 8Amp
VR = 200V
The planarstructure and the platinum doped life time control, guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-
wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters Max Units
VRRM Peak Repetitive Peak Reverse Voltage 200 V
IHAV) Average Rectifed Forward Current 8 A
Total Device, (Rated VR), Tc = 150°C
IFSM Non Repetitive Peak Surge Current 100
IFM Peak Repetitive Forward Current 16
(Rated VR, Square wave, 20 KHz), Tc = 150°C
Ts TSTG Operating Junction and Storage Temperatures -65 to 175 (
Case Styles
MUR820 MURB820 MURB820-1
TO-220AC
wwwjrf.com
MUR820, MURB820, MURB820-1 International
Bulletin PD-20731 rev.C 12/03 TOR Rectifier
Electrical Characteristics (ti) Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBR, v, BreakdownN/oltage, 200 - - V IR = 100PA
Blocking Voltage
Vi: Forward Voltage - - 0.975 V IF = 8A
- - 0.895 V IF = 8A, Tu = 150°C
IR Reverse LeakageCurrent - - 5 pA VR = VR Rated
- - 250 pA To = 150°C, VR = VR Rated
CT Junction Capacitance - 25 - pF VR = 200V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse RecoveryTime - - 35 ns IF = 1.0A, diF/dt = 50A/ps, VR = 30V
- - 25 IF = 0.5A, IR = 1.0A, IREC = 0.25A
- 20 - To = 25°C IF = 8A
34 To =125°c VR = 160V
diF /dt = 200AIps
IRRM Peak Recovery Current - 1.7 - A To = 25°C
- 4.2 - To = 125°C
Qrr Reverse Recovery Charge - 23 - nC T J = 25''C
- 75 - T: = 125°C
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
TJ Max. Junction Temperature Range - - - 65 to 175 ''C
Tsts Max. StorageTemperature Range - - - 65 to 175
Rmoc Thermal Resistance, Junction to Case - - 3.0 ''CI W
RNA Thermal Resistance, Junction to Ambient - - 5O
Rmcs C) Thermal Resistance, Case to Heatsink - 0.5 -
Wt Weight - 2.0 - g
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 Ibt.in
co Mounting Surface, Flat, Smooth and Greased
2
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