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MUN 5114T1-MUN5111T1-MUN5112T1-MUN5113T1-MUN5114T1 Fast Delivery,Good Price
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MUN 5114T1 |MUN5114T1MOTN/a2800avaiPNP SILICON BIAS RESISTOR TRANSISTOR
MUN5111T1MOTON/a41259avaiBias Resistor Transistor PNP
MUN5112T1MOTON/a18856avaiBias Resistor Transistor
MUN5112T1LRCN/a2262000avaiBias Resistor Transistor
MUN5113T1LRCN/a147000avaiPNP SILICON BIAS RESISTOR TRANSISTOR
MUN5113T1MOTON/a25228avaiPNP SILICON BIAS RESISTOR TRANSISTOR
MUN5114T1MOTON/a19509avaiPNP SILICON BIAS RESISTOR TRANSISTOR


MUN5112T1 ,Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MUN5112T1 ,Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
MUN5112T1 ,Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
MUN5112T1G ,Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MUN5113DW1 ,Dual Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )A 1 2Characteristi ..
MUN5113DW1T1 ,Dual Bias Resistor Transistorhttp://onsemi.com3MUN5111DW1T1 SeriesALL MUN5111DW1T1 SERIES DEVICES30025020015010050 R = 490°C/WθJ ..
NC4D-DC24V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC4D-DC24V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC4D-DC5V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC4D-DC5V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC4D-JP-DC24V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC4D-JP-DC48V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT


MUN 5114T1-MUN5111T1-MUN5112T1-MUN5113T1-MUN5114T1
PNP SILICON BIAS RESISTOR TRANSISTOR
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
PIN1
BASE
(INPUT) -
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–70/SOT–323 package which
is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC–70/SOT–323 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die. Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS
DEVICE MARKING AND RESISTOR VALUES
Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. New devices. Updated curves to follow in subsequent data sheets.
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by MUN5111T1/D
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SEMICONDUCTOR TECHNICAL DATA
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