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Partno Mfg Dc Qty AvailableDescript
MUN2113T1GONN/a6000avaiBias Resistor Transistor
MUN2114T1GONN/a3000avaiBias Resistor Transistor
MUN2137T1ONN/a18000avaiBias Resistor Transistor


MUN2137T1 ,Bias Resistor TransistorMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
MUN2211T1 ,NPN SILICON BIAS RESISTOR TRANSISTORTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation P 230 (Note 1) mW ORD ..
MUN2212 ,Bias Resistor TransistorMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
MUN2212T1 ,NPN SILICON BIAS RESISTOR TRANSISTORELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MUN2212T1 ,NPN SILICON BIAS RESISTOR TRANSISTORELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MUN2213 ,Bias Resistor TransistorMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
NC ,Series Single Value Chip and Wire Capacitors Revision 28-Mar-03 101NC SeriesVishay Electro-FilmsDC WORKING VOLTAGES VALUES AND TOLERANCESNCA 0.0 ..
NC2D-JP-DC12V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC2D-JP-DC5V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC2D-JP-DC5V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC2D-JPL2-DC12V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC2D-P-DC12V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT


MUN2113T1G-MUN2114T1G-MUN2137T1
Bias Resistor Transistor
MUN2111T1 Series
Bias Resistor T ransistors
PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC−59 package which is designed for low power
surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B The SC−59 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die. Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.1. FR−4 @ Minimum Pad.2. FR−4 @ 1.0 x 1.0 inch Pad.
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