MTP8N50E ,TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MTS2916A , Highly Integrated 3-Phase BLDC Sinusoidal Sensorless
MTSF1P02HD ,SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MTSF1P02HD ,SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4)CCharacteristic Symbol Min Typ ..
MTSF2P02HD ,SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 2.)CCharacteristic Symbol Min Ty ..
MTSF3N02HD ,Power MOSFET 3 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NAND256R3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256W3A0AN6 ,128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memoriesapplications■ NAND INTERFACETSOP48 12 x 20mm– x8 or x16 bus width– Multiplexed Address/ Data– Pinou ..
NAND256W3A0AZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256W3A0AZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256W3A2AN6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256W3A2AZA6 ,128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash MemoriesBlock Diagram . . . . . 9Figure 4. TSOP48 and WSOP48 Connections, x8 devices . . . . . . 1 ..
MTP8N50E
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM
TMOS E-FET .
Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon GateThis high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced TMOS E−FET is
designed to withstand high energy in the avalanche and commutation
modes. This new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, converters, PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients. Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
