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Partno	Mfg	Dc	Qty	Available	Descript
MTP6N60		N/a	100	avai	Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220
MTP6N60	ST	N/a	300	avai	Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220

MTP6N60 ,Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V < 1.2 Ω ..
MTP6N60 ,Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V < 1.2 Ω ..
MTP6N60E ,TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTP6P20E ,TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP6P20E ,TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 20 ..
MTP75N05HD ,TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS3, DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R R , DRAIN-TO-SOURCE RESISTANCE (OHMS)DS(on) ..
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

MTP6N60
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220
MTP6N60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
November 1996
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
MTP6N60
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
MTP6N60
3/9
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
MTP6N60
4/9
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Cross-over TimeTurn-off Drain-source Voltage Slope
MTP6N60
5/9
Switching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
MTP6N60
6/9

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