MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N06HD/D* * ** * Motorola Preferred Dev ..
MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP60N06HD ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM3R , DRAIN−TO−SOURCE RESISTANCE (OHMS), DRAIN−TO−SOURCE RESISTANCE DS(on)RDS(on)I , DRAIN CURRENT ( ..
MTP60N06HD ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP6N60 ,Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V < 1.2 Ω ..
MTP6N60 ,Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V < 1.2 Ω ..
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
MTP5P25
POWER FIELD EFFECT TRANSISTOR
