MTP5N20 ,POWER FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS (TC = 25°C unless otherWIse noted)Characteristic Symbol Min Max UnitOFF ..
MTP5N40E ,TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP5P06V ,TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTP5P25 ,POWER FIELD EFFECT TRANSISTORMOTOROLA SC {XSTRS/R " ESEMOTOROLATECHNICAL DATAAdvance InformationPower Field Effect TransistorP-C ..
MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N06HD/D* * ** * Motorola Preferred Dev ..
MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
MTP5N20
POWER FIELD EFFECT TRANSISTOR
