MTP3055VL ,Power MOSFET 12 Amps, 60 Volts, Logic Level3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDDS(on ..
MTP3055VL ,Power MOSFET 12 Amps, 60 Volts, Logic Level
MTP30N06VL ,Power MOSFET 30 Amps, 60 Volts, Logic Levelhttp://onsemi.com3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURREN ..
MTP30P06V ,Power MOSFET 30 Amps, 60 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTP30P06V ,Power MOSFET 30 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP30P06V ,Power MOSFET 30 Amps, 60 Volts3, DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R, DRAIN-TO-SOURCE RESISTANCER DS(on) ..
NAND01GW3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2DZA6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
MTP3055VL
Power MOSFET 12 Amps, 60 Volts, Logic Level
MTP3055VL
Preferred DevicePower MOSFET
12 Amps, 60 Volts, Logic Level
N–Channel TO–220This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
