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Partno	Mfg	Dc	Qty	Available	Descript
MTP3055	摩托罗拉	N/a	150	avai	N

MTP3055 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 60 VDS GSV Drain- ..
MTP3055E ,N-channel TMOS power FET. 60 V, 12 A, Rds(on) 0.15 Ohm.MOTOROLA SC (XSTRS/R F) EBE I) " b35735'4 0096153]: SM INOTI:MOTOROLA" SEMICONDUCTORTECHNICAL DATAA ..
MTP3055EL ,N-channel TMOS power FET logic level. 60 V, 12 A, Rds(on) 0.18 Ohm.ELECTRICAL CHARACTERISTICS - continued (Tc = 25°C unless otherwise noted)Characteristic Symbol Min ..
MTP3055V ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP3055V. ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP3055VL ,Power MOSFET 12 Amps, 60 Volts, Logic Level3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDDS(on ..
NAND01GW3B2BN6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW3B2BN6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2BZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

MTP3055
N
MTP3055E- CHANNEL 60V- 0.1Ω- 12A TO-220
STripFET MOSFET TYPICAL RDS(on)=0.1Ω AVALANCHERUGGED TECHNOLOGY 100%AVALANCHE TESTED 175oC OPERATING TEMPERATURE APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC& DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
July 19992
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 60 V
VDGR Drain- gate Voltage (RGS =20 kΩ)60 V
VGS Gate-source Voltage ±20 V Drain Current (continuous)atTc =25o C12 A
IDM Drain Current (pulsed)atTc=100o C9 A
IDM(•) Drain Current (pulsed) 48 A
Ptot Total DissipationatTc =25o C40 W
Tstg Storage Temperature -65to175 oC Max. Operating Junction Temperature 175 oC
(•) Pulse width limitedbysafe operatingarea
Firstdigit ofthedatecode beingZorK identifies silicon characterizedinthis datasheet.
TYPE VDSS RDS(on) ID
MTP3055E 60V < 0.15Ω 12A
1/8
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-s
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead TemperatureFor Soldering Purpose
300C/W
oC/WC/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max) A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =25V) mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS=0 60 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating x0.8Tc =125oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ±100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =VGSID=250 μA2 2.9 4 V
RDS(on) Static Drain-sourceOn
Resistance
VGS =10VID=7A 0.1 0.15 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max VGS =10V 12 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID=6A 4 6 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25Vf= 1MHz VGS=0 760
MTP3055E
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
td(off)
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =30V ID=7A =50 Ω VGS =10V
(see test circuit)
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge =12A VGS =10V
VDD =40V
(see test circuit)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗)ForwardOn Voltage ISD =12A VGS=0 2.0 V
trr
Qrr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD=12A di/dt=100 A/μs
VDD =30VTj=150oC
(∗) Pulsed: Pulse duration= 300μs,dutycycle 1.5%
(•) Pulse width limitedbysafe operatingarea
Safe Operating Area Thermal Impedance
MTP3055E
3/8
Output Characteristics
Transconductance
Gate Chargevs Gate-sourceVoltage
Transfer Characteristics
Static Drain-sourceOn Resistance
Capacitance Variations
MTP3055E
4/8
Normalized Gate Threshold Voltagevs
Temperature
Source-drain Diode Forward Characteristics
NormalizedOn Resistancevs Temperature
MTP3055E
5/8
Fig.1: Unclamped Inductive Load Test Circuit
Fig.3: Switching Times Test CircuitsFor
Resistive Load
Fig.2: Unclamped Inductive Waveform
Fig.4: Gate Chargetest Circuit
Fig.5: Test CircuitFor Inductive Load Switching
And Diode Recovery Times
MTP3055E
6/8

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