MTP2P50EG ,Power MOSFET 2 Amps, 500 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP3055 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 60 VDS GSV Drain- ..
MTP3055E ,N-channel TMOS power FET. 60 V, 12 A, Rds(on) 0.15 Ohm.MOTOROLA SC (XSTRS/R F) EBE I) " b35735'4 0096153]: SM INOTI:MOTOROLA" SEMICONDUCTORTECHNICAL DATAA ..
MTP3055EL ,N-channel TMOS power FET logic level. 60 V, 12 A, Rds(on) 0.18 Ohm.ELECTRICAL CHARACTERISTICS - continued (Tc = 25°C unless otherwise noted)Characteristic Symbol Min ..
MTP3055V ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP3055V. ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NAND01GW3B2BN6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW3B2BN6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2BZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
MTP2P50EG
Power MOSFET 2 Amps, 500 Volts
MTP2P50E
Preferred DevicePower MOSFET
2 Amps, 500 Volts
P–Channel TO–220This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
