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MTP2P50ONN/a15avaiTMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
MTP2P50EXN/a500avaiTMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM


MTP2P50E ,TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 50 ..
MTP2P50EG ,Power MOSFET 2 Amps, 500 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP3055 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 60 VDS GSV Drain- ..
MTP3055E ,N-channel TMOS power FET. 60 V, 12 A, Rds(on) 0.15 Ohm.MOTOROLA SC (XSTRS/R F) EBE I) " b35735'4 0096153]: SM INOTI:MOTOROLA" SEMICONDUCTORTECHNICAL DATAA ..
MTP3055EL ,N-channel TMOS power FET logic level. 60 V, 12 A, Rds(on) 0.18 Ohm.ELECTRICAL CHARACTERISTICS - continued (Tc = 25°C unless otherwise noted)Characteristic Symbol Min ..
MTP3055V ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
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NAND01GW3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory


MTP2P50-MTP2P50E
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
 -- -  -P–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions—
The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
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