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MTP2955VONN/a121avaiPower MOSFET 12 Amps, 60 Volts


MTP29N15E ,Power MOSFET 29 Amps, 150 Volts
MTP2N20 ,POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATEELECTRICAL CHARACTERISTICS - continued (Tc = 25''C unless otherwise noted)Characteristic SymbolON C ..
MTP2N40 ,N-Channel Power MOSFETs, 2.25A, 350-400Vapplications, such as switching power supplies, converters, AC and DC motor controls, relay and s ..
MTP2N50 ,N-Channel Power MOSFETs, 3.0 A, 450 V/500 Vapplications, fi) such as switching power supplies, converters, AC and DC motor controls, relay a ..
MTP2N60E ,TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS3, DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (OHMS)RDS(on) I , DRAIN CURRENT (AMP ..
MTP2P50 ,TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories


MTP2955V
Power MOSFET 12 Amps, 60 Volts
MTP2955V
Preferred Device

Power MOSFET
12 Amps, 60 Volts
P–Channel TO–220

This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
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