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MTP10N10EMOTN/a15avaiTMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM


MTP10N10E ,TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MTP12N06 ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP12N10E ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP12N20 ,N-Channel Power MOSFETs, 12A, 150-200 Vapplications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid ..
MTP12P06 ,POWER FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS (Tc = 25''C unless otherwise noted)Characteristic Symbol Min Max UnitOFF ..
MTP12P10 ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
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NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory


MTP10N10E
TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
 -- -N–Channel Enhancement–Mode Silicon Gate
This advanced “E” series of TMOS power MOSFET s is designed
to withstand high energy in the avalanche and commutation
modes. These new energy efficient devices also offer drain–to–
source diodes with fast recovery times. Designed for low voltage,
high speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits where diode speed and commutating safe
operating area are critical, and offer additional safety margin
against unexpected voltage transients. Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode — Unclamped Inductive Switching (UIS)
Energy Capability Specified at 100°C Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS
Designer’s Data for “Worst Case” Conditions—
The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
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