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MTDF1N02HDONN/a1290avaiDUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM
MTDF1N02HDMOTN/a411avaiDUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM


MTDF1N02HD ,DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MTDF1N02HD ,DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTDF1N02HD/D*  * **Medium Power Surface Mount ..
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MTDF1N02HD
DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM
MTDF1N02HD
Power MOSFET
1 Amp, 20 Volts
N−Channel Micro8�, Dual

These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc−dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be usedfor low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and
additional safety margin against unexpected voltage transients. Miniature Micro8 Surface Mount Package − Saves Board Space Extremely Low Profile (<1.1 mm) for thin applications such as
PCMCIA cards• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life• Logic Level Gate Drive − Can Be Driven by Logic ICs Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for Micro8 Package Provided
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