IC Phoenix
 
Home ›  MM166 > MTD9N10E,TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
MTD9N10E Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
MTD9N10EONN/a10avaiTMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
MTD9N10EMOTN/a450avaiTMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM


MTD9N10E ,TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM3, DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTD9N10E ,TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTDF1N02HD ,DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MTDF1N02HD ,DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTDF1N02HD/D*  * **Medium Power Surface Mount ..
MTDF2N06HD ,Power MOSFET 2 Amps, 60 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
MTI3006X , VHF/UHF-Tuner IC
N8T26AF , Schottky Three-State Quad Bus Driver/Receiver
N8T28F , Schottky Three-State Quad Bus Driver/Receiver
N8T96N , High Speed Hex 3-State Buffers/Inverters
NA555DR ,Precision Timers 8-SOIC -40 to 105Features 3 DescriptionThese devices are precision timing circuits capable of1• Timing From Microsec ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105FEATURESNA556...D OR N PACKAGE• Two Precision Timing Circuits Per Package NE556...D, N, OR NS PACKA ..


MTD9N10E
TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
MTD9N10E
Preferred Device

Power MOSFET 9 Amps, 100 Volts
N−Channel DPAK

This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Replaces MTD6N10
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED