MTD6P10ET4 ,Power MOSFET 6 Amps, 100 Voltshttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURREN ..
MTD9N10E ,TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM3, DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTD9N10E ,TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTDF1N02HD ,DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MTDF1N02HD ,DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTDF1N02HD/D* * **Medium Power Surface Mount ..
MTDF2N06HD ,Power MOSFET 2 Amps, 60 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
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NA555DR ,Precision Timers 8-SOIC -40 to 105Features 3 DescriptionThese devices are precision timing circuits capable of1• Timing From Microsec ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105FEATURESNA556...D OR N PACKAGE• Two Precision Timing Circuits Per Package NE556...D, N, OR NS PACKA ..
MTD6P10E-MTD6P10ET4
Power MOSFET 6 Amps, 100 Volts
MTD6P10E
Preferred DevicePower MOSFET 6 Amps, 100 Volts
P−Channel DPAKThis Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) When surface mounted to an FR4 board using the minimum
recommended pad size. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
