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MTD6N15MOTOROLAN/a30avaiTMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM


MTD6N15 ,TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
MTD6N15T4 ,TMOS Power 150V .3RELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
MTD6N20E ,Power MOSFET 6 Amps, 200 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value Unit SDrain-to-Source Voltage ..
MTD6N20ET4 ,Power MOSFET 6 Amps, 200 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD6N20ET4G ,Power MOSFET 6 Amps, 200 Volts3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTD6P10E ,Power MOSFET 6 Amps, 100 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
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NA556DR ,Dual Precision Timers 14-SOIC -40 to 105FEATURESNA556...D OR N PACKAGE• Two Precision Timing Circuits Per Package NE556...D, N, OR NS PACKA ..


MTD6N15
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM
 - - -N–Channel Enhancement–Mode Silicon Gate
This TMOS Power FET is designed for high speed, low loss
power switching applications such as switching regulators, convert-
ers, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds Low RDS(on) — 0.3 Ω Max Rugged — SOA is Power Dissipation Limited Source–to–Drain Diode Characterized for Use With
Inductive Loads Low Drive Requirement — VGS(th) = 4.0 V Max Surface Mount Package on 16 mm Tape
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
OFF CHARACTERISTICS

(1) These ratings are applicable when surface mounted on the minimum pad size recommended. (continued)
Designer’s Data for “Worst Case” Conditions—
The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
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