MTD3055VL ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD3055VL1 ,Power MOSFET 12 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD3055VLT4 ,Power MOSFET 12 Amps, 60 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTD3055VT4 ,Power MOSFET 12Amps, 60 Volts3, DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS), DRAIN-TO-SOURCE RESISTANCE RRDS(on) ..
MTD3302 ,OBOSLETEMAXIMUM RATINGS (T = 25°C unless otherwise specified)JY = YearParameter Symbol Value UnitWW = Work ..
MTD3302 ,OBOSLETE
N87C251SA16 , HIGH-PERFORMANCE CHMOS MICROCONTROLLER
N87C251SB16 , HIGH-PERFORMANCE CHMOS MICROCONTROLLER
N87C42 , UNIVERSAL PERIPHERAL INTERFACE CHMOS 8-BIT SLAVE MICROCONTROLLER
N87C54 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C54-24 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C58-1 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
MTD3055VL
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM
-- - -
N–Channel Enhancement–Mode Silicon GateTMOS V is a new technology designed to achieve an on–resis-
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and
TMOS E–FET Surface Mount Package Available in 16 mm 13–inch/2500 Unit
Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
