MTD2N40E ,Power MOSFET 2 Amps, 400 Volts3, DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R R , DRAIN−TO−SOURCE RESISTANCE (OHMS)DS(o ..
MTD2N50E ,TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD2N50E ,TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM3, DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTD3055EL ,TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate)ELECTRICAL CHARACTERISTICS (Tc = 25'C unless otherwise noted)Churamristic Symbol Mln Max UnitOFF CH ..
MTD3055EL ,TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate)MOTOROLA SC (XSTRS/R F) EBE D " ia3ia7i?Sq M'38SO b3” .NOTEMOTOROLA- SEMICONDUCTOR 'lll1ll8llllllll ..
MTD3055V ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM3, DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS), DRAIN−TO−SOURCE RESISTANCE RRDS(on) ..
N87C196KB-16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KC20 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KC20 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KC-20 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KR , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196MC , INDUSTRIAL MOTOR CONTROL MICROCONTROLLER
MTD2N40E
Power MOSFET 2 Amps, 400 Volts
MTD2N40E
Power MOSFET
2 Amps, 400 Volts
N−Channel DPAKThis high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.• Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Replaces MTD1N40E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
