IC Phoenix
 
Home ›  MM166 > MTD2955V-MTD2955VT4-MTD2955VT4G,Migrate to NTD2955
MTD2955V-MTD2955VT4-MTD2955VT4G Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
MTD2955VONN/a339avai P-Channel Enhancement Mode Field Effect Transistor [Life-time buy]
MTD2955VT4ONN/a363365avaiMigrate to NTD2955
MTD2955VT4GONN/a23300avaiMigrate to NTD2955


MTD2955VT4 ,Migrate to NTD2955MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain−to−Source Voltage V ..
MTD2955VT4G ,Migrate to NTD2955ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD2N40E ,Power MOSFET 2 Amps, 400 Volts3, DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R R , DRAIN−TO−SOURCE RESISTANCE (OHMS)DS(o ..
MTD2N50E ,TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD2N50E ,TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM3, DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTD3055EL ,TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate)ELECTRICAL CHARACTERISTICS (Tc = 25'C unless otherwise noted)Churamristic Symbol Mln Max UnitOFF CH ..
N87C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB-16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KC20 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER


MTD2955V-MTD2955VT4-MTD2955VT4G
Migrate to NTD2955
MTD2955V
Power MOSFET 12 A, 60 V
P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected. When surface mounted to an FR4 board using the minimum recommended
pad size. When surface mounted to an FR4 board using the 0.5 sq.in. pad size.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED