MTD2955ET4 ,TMOS E-FET Power Field Effect Transistor DPAK for Surface MountGateTMOS POWER FETThis advanced TMOS E−FET is designed to withstand high energy12 AMPERESin the ava ..
MTD2955V , P-Channel Enhancement Mode Field Effect Transistor [Life-time buy]3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTD2955VT4 ,Migrate to NTD2955MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain−to−Source Voltage V ..
MTD2955VT4G ,Migrate to NTD2955ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD2N40E ,Power MOSFET 2 Amps, 400 Volts3, DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R R , DRAIN−TO−SOURCE RESISTANCE (OHMS)DS(o ..
MTD2N50E ,TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
N87C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB-16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KC20 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
MTD2955E-MTD2955ET4
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
MTD2955E
Preferred Device TMOS E-FET . Power Field
Effect Transistor DP AK for
Surface Mount
P−Channel Enhancement−Mode Silicon
GateThis advanced TMOS E−FET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Surface Mount Package Available in 16 mm, 13 inch /
2500 Unit Tape & Reel, Add T4 Suffix to Part Number Replaces the MTD2955
