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MTD20P06HDL-MTD20P06HDLT4-MTD20P06HDLT4G
Power MOSFET 20 Amps, 60 Volts, Logic Level
MTD20P06HDL
Preferred DevicePower MOSFET
20 Amps, 60 Volts, Logic
Level
P−Channel DPAKThis Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low−voltage, high−speed switching applications in power supplies,
converters and PWM motor controls, and other inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients. Ultra Low RDS(on), High−Cell Density, HDTMOS Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Avalanche Energy Specified
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) When surface mounted to an FR4 board using the minimum recommended
pad size. When surface mounted to an FR4 board using 0.5 sq. inch pad size.
