MTD20P03HDLT4G ,Power MOSFET 20 Amps, 30 Volts, Logic Level P-Channel DPAK3R , DRAIN-TO-SOURCE RESISTANCE (OHMS), DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R DS(on) ..
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MTD20P03HDLT4-MTD20P03HDLT4G
Power MOSFET 20 Amps, 30 Volts, Logic Level P-Channel DPAK
MTD20P03HDL
Preferred DevicePower MOSFET 20 Amps, 30 Volts, Logic Level
P−Channel DPAKThis Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) When surface mounted to an FR−4 board using the minimum
recommended pad size. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
