MTD20N06HDL ,Power MOSFET 20 Amps, 60 Volts, Logic Level3, DRAIN-TO-SOURCE RESISTANCER R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on) ..
MTD20N06HDLT4G , Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK
MTD20N06HDT4 , Power MOSFET 20 Amps, 60 Volts N−Channel DPAK
MTD20N06HDT4 , Power MOSFET 20 Amps, 60 Volts N−Channel DPAK
MTD20N06V ,TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTD20N06V ,TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
N83C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N85C220-10 , Classic EPLDs
N85C220-7 , Classic EPLDs
MTD20N06HDL
Power MOSFET 20 Amps, 60 Volts, Logic Level
MTD20N06HDL
Preferred DevicePower MOSFET 20 Amps, 60 Volts, Logic Level
N–Channel DPAKThis advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low–voltage, high–speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits, and
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched, and to offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) When surface mounted to an FR–4 board using the minimum recommended
pad size.
