MTD20N06HD ,Power MOSFET 20 Amps, 60 Volts3R , DRAIN−TO−SOURCE RESISTANCE (OHMS)DS(on)I , DRAIN CURRENT (AMPS)D, DRAIN−TO−SOURCE RESISTANCERD ..
MTD20N06HDL ,Power MOSFET 20 Amps, 60 Volts, Logic Level3, DRAIN-TO-SOURCE RESISTANCER R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on) ..
MTD20N06HDLT4G , Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK
MTD20N06HDT4 , Power MOSFET 20 Amps, 60 Volts N−Channel DPAK
MTD20N06HDT4 , Power MOSFET 20 Amps, 60 Volts N−Channel DPAK
MTD20N06V ,TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
N83C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N85C220-10 , Classic EPLDs
N85C220-7 , Classic EPLDs
MTD20N06HD
Power MOSFET 20 Amps, 60 Volts
MTD20N06HD
Power MOSFET
20 Amps, 60 Volts
N−Channel DPAKThis Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.• Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) When surface mounted to an FR−4 board using the minimum recommended pad size.2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
