MTB50N06EL ,TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTB50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTS3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTB50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB50P03HDL ,Power MOSFET 50 Amps, 30 Volts, Logic LevelMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value Unit4Drain–Source Voltage V 3 ..
MTB50P03HDL ,Power MOSFET 50 Amps, 30 Volts, Logic Level3R , DRAIN-TO-SOURCE RESISTANCE (OHMS)DS(on), DRAIN-TO-SOURCE RESISTANCERDS(on)(NORMALIZED) I , DRA ..
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N82S23N ,256-bit TTL bipolar PROM 32 x 8
N8344AH , SDLC Communications Controller
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MTB50N06EL
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS
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N–Channel Enhancement–Mode Silicon GateThese TMOS Power FETs are designed for high speed, low loss
power switching applications such as switching regulators, convert-
ers, solenoid and relay drivers. This Logic Level Series part is
specified to operate with level logic gate–to–source voltage of 5 volt
and 4 volt. Silicon Gate for Fast Switching Speeds Low RDS(on)— 0.028 Ω max Replace External Zener Transient Suppressor — Absorbs High
Energy in the Avalanche Mode Specially Designed Leadframe for Maximum Power Dissipation Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET, Designer’s and L2TMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
