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MT6L57AE
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA MT6L57AE
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT6L57AE
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
0 Two devices are built in to the super-thin and extreme super
mini (6 pins) package : ES6
MOUNTED DEVICES
0.5 0.5
Q1 : SSM (TESM) Q2 : SSM (TESM)
Three-pins (SSM/TESM) mold MT3SOBS MT3SO4AS
products are corresponded. (MT3SO6T) (MT3SO4AT)
0.12 i005
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL Q1 Q2 UNIT
Collector-Base Voltage VCBO 10 10 V g. $$$$qu 1 l' EQSIETZER 2
Collector-Emitter Voltage VCEO 5 5 V 3. COLLECTOR 2 6. BASE 1
Emitter-Base Voltage VEBO 1.5 2 V JEDEC -
Collector Current IC 15 40 mA JEIT A -
Base Current IB 7 10 mA TOSHIB A 2-2NlC
Collector Power Dissipation (:gte 1) 100 mW Weight : 0.003 g
Junction Temperature Tj 125 "C
Storage Temperature Range Tstg -55--125 "C
(Note 1) .. Total power dissipation of Q1 and Q2.
MARKING PIN ASSIGNMENT (TOP VIEW)
6 5 4 Type Name B1 E2 B2
n n 7/ H H H
Ll Ll Ll Ll U Ll
1 2 3 CI E1 C2
1 2001-12-10
TOSHIBA MT6L57AE
ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 5V, IE = 0 - - 0.1 PA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 - - 1 PA
DC Current Gain hFE VCE = 1 V, 10 = 5mA 70 - 140 -
Transition Frequency fT VCE = 3 V, IC = 5 mA 7 10 - GHz
VCE = IV, 10 = 5mA,
I ti G . lS21d (1) f= 2 GHz 7.5 dB
nser ion am
VCE = 3V, IC = 7mA,
|821el (2) f = 2 GHz 4.5 8 dB
NF (1) VCE = IV, 1C = 3rnA, - 1.7 3 dB
N . Fi f = 2 GHz
Olse lgure
VCE = 3V, IC = 3mA,
NF (2) f = 2 GHz - 1.6 3 dB
Reverse Transfer VCB = 1 V, IE = 0,
Capacitance Cre f= 1 MHz (Note 2) - 0.35 0.75 PF
ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 5V, IE = 0 - - 0.1 pA
Emitter Cut-off Current IEBO VEB = 1 V, 1C = O - - 1 PA
DC Current Gain hFE VCE = 1 V, 10 = 5mA 80 - 160 -
. . fT (1) VCE = IV, IC = 5mA 2 4.5 - GHz
Transition Frequency fT (2) VCE = 3V, IC = 7 mA 5 7 - GHz
lsz1e|2 (1) 272131 21;“ 1C = 5rnA, - 8.5 - dB
Insertion Gain
VCE = 3V, IC = 20 mA,
lS21d (2) f = 1 GHz 7.5 11 dB
NF (1) VCE = IV, IC = 5mA, - 1.3 2.2 dB
N . Fi f = 1 GHz
01se lgure
VCE = 3V, IC = 7mA,
NF (2) f = 1 GHz - 1.2 2 dB
Reverse Transfer VCB = 1 V, IE = 0,
Capacitance Cre f-- 1 MHz (Note 2) - os 1.25 FF
(Note 2) .' Cre is measured by 3 terminal method with capacitance bridge.
HANDLING PRECAUTION
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static
materials.
TOSHIBA MT6L57AE
RESTRICTIONS ON PRODUCT USE
000707EBA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-12-10
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