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MT4S102T
Radio-frequency SiGe Heterojunction Bipolar Transistor
MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type
MT4S102T UHF-SHF Low Noise Amplifier Application
FEATURES Low Noise Figure :NF=0.58dB (@f=2GHz)
• High Gain:|S21e|2 =16.0dB (@f=2GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit:mm
Weight: 0.0015 g (typ.) 3 2
