MT3S111 ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S111P ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S111TU ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S113P ,Radio-frequency SiGe Heterojunction Bipolar Transistorabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
MT3S11T , VHF~UHF Band Low-Noise Amplifier Applications
MT3S12T , VHF~UHF Band Low-Noise Amplifier Applications
MX29LV320ATTC-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATXEI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MT3S111
Radio-frequency SiGe Heterojunction Bipolar Transistor
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz)
• High Gain:|S21e|2 =12 dB (typ.) (@ f=1 GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C) Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
Weight: 0.012 g (typ.)
