MT3S07S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 reNF215dR1.6:02-.v -Whm=3V,In=5mA,f= 2GHz)0.8:.t0.1F—T—fl ..
MT3S07T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 Il 0.8 i 0.05221C0 T.nw Nnign Fianna . NF = 1 BAR I-.v -(Vnm ..
MT3S08T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB 2|S21e| = 10.5d ..
MT3S111 ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S111P ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S111TU ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MX29LV320ATTC-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATXEI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MT3S07S
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA MT3SO7S
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT3S07S
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
0 Low Noise Figure : NF = 1.5 dB
(VCE=3V,IC=5mA,f=2GHz) -"-'-0) ,3
0 High Gain .' IS21e|2 = 9.5 dB N, F. 3 F- I I),
(VCE=3V,IC=15mA,f=2GHz) tlt/ m lik'
.-' .- ci 2
MAXIMUM RATINGS (Ta = 25°C) Er.-
CHARACTERISTIC SYMBOL RATING UNIT . i g;
Collector-Base Voltage VCBO 10 V E- (ui','.]' | I g
Co11eetor-Emitter Voltage VCEO 5 V g
Emitter-Base Voltage VEBO 1.5 V el,
Collector Current IC 25 mA
Base Current IB 10 mA
Collector Power Dissipation PC 100 mW ; 'lt%,
Junction Temperature Tj 125 "C l' COLLECTOR
Storage Temperature Range Tstg -55--125 C JEDE C -
MARKING EIAJ -
3 TOSHIBA 2-2H1A
Weight : 0.0024g
MICROWAVE CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Transition Frequency fT VCE = 3 V, 10 = 10mA 10 12 - GHz
V = 1 V, I = 5mA,
IS21el2(1) f 2E2 GHz C - 7.5 -
Insertion Gain IS F(2) VCE = 3V, 1C = 15 mA, 6 5 9 5 dB
21e f = 2 GHz . . -
NF(1) 279% al,,)'' IC = 5mA, - 1.6 3
Noise Figure NF(2) VCE = 3V, 10 = 5mA, 1 5 3 dB
f = 2 GHz - .
000707EAA2
O TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction
or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizin TOSHIBA
products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or
failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your desi ns, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent
TOSHIBA products speci ications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor
Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
o The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office
equipment, measuring1 equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for
usage in equipment t at requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic ener y control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, me ical instruments, all types of safety devices, etc.. Unintended Usage of
TOSHIBA products listed in this document shall be made at the customer's own risk.
0 The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
2000-09-11 1/2
TOSHIBA MT3SO7S
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off
Current ICBO VCB - 5 V, IE - 0 - - 0.1 PA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 - - 1 pdk
DC Current Gain hFE VCE = 1 V, 10 = 5 mA 70 - 140 -
Reverse Transfer VCB = 1 V, IE = o, f = 1 MHz
Capacitance Cre (Note) - 0.4 0.85 pF
(Note) .' Cre is measured by 3 terminal method with capacitance bridge.
CAUTION
This device electrostatic sensitivity. Please handle with caution.
2000-09-11 2/2
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