| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MT3S07FS |
TOSHIBA|TOSHIBA |
N/a |
9660 |
 |
VHF~UHF Band Low-Noise Amplifier Applications |
MT3S07FS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S07S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 reNF215dR1.6:02-.v -Whm=3V,In=5mA,f= 2GHz)0.8:.t0.1F—T—fl ..
MT3S07T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 Il 0.8 i 0.05221C0 T.nw Nnign Fianna . NF = 1 BAR I-.v -(Vnm ..
MT3S08T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB 2|S21e| = 10.5d ..
MT3S111 ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MX29LV320ATTC-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
