MSP430F1101IDW ,16-Bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B RAM, Comparator 20-SOIC -40 to 85MSP430C11x1, MSP430F11x1AMIXED SIGNAL MICROCONTROLLERSLAS241I − SEPTEMBER 1999 − REVISED DECEMBER 2 ..
MSP430F1101IDWR ,16-Bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B RAM, Comparator 20-SOIC -40 to 85MSP430C11x1, MSP430F11x1AMIXED SIGNAL MICROCONTROLLERSLAS241I − SEPTEMBER 1999 − REVISED DECEMBER 2 ..
MSP430F1101IPW ,16-Bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B RAM, Comparator 20-TSSOP -40 to 85featuresa powerful 16-bit RISC CPU, 16-bit registers, and constant generators that contribute to ma ..
MSP430F1101IPWR ,16-Bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B RAM, Comparator 20-TSSOP -40 to 85MSP430C11x1, MSP430F11x1AMIXED SIGNAL MICROCONTROLLERSLAS241I − SEPTEMBER 1999 − REVISED DECEMBER 2 ..
MSP430F110IPW ,MIXED SIGNAL MICROCONTROLLER
MSP430F1111AIDW ,16-bit Ultra-Low-Power Microcontroller, 2kB Flash, 128B RAM, ComparatorMSP430C11x1, MSP430F11x1AMIXED SIGNAL MICROCONTROLLERSLAS241I − SEPTEMBER 1999 − REVISED DECEMBER 2 ..
MUR120G , SWITCHMODE Power Rectifiers
MUR120RL ,1A 200V Ultrafast Rectifier3P , AVERAGE POWER DISSIPATION (WATTS) i , INSTANTANEOUS FORWARD CURRENT (AMPS)F(AV)FI , REVERSE CU ..
MUR130 ,1.0 AMPS. ULTRA FAST RECTIFIERSELECTRICAL CHARACTERISTICSMaximum Instantaneous Forward Voltage (Note 1) v VF(i = 1.0 Amp, T = 150° ..
MUR140 ,Fast / Super-Fast / Ultra-Fast Recovery RectifiersMAXIMUM RATINGSMUR105 110 115 120 130 140 160Rating Symbol UnitPeak Repetitive Reverse Voltage V 50 ..
MUR140RL ,1A 400V Ultrafast Rectifier2MUR120 SeriesMUR105, MUR110, MUR115, MUR12010 100T = 175°CJ7.0105.01.0100°C3.0T = 175°C 100°CJ0.12 ..
MUR140RLG , SWITCHMODE Power Rectifiers
MSP430F1101-MSP430F1101IDW-MSP430F1101IDWR-MSP430F1101IPW-MSP430F1101IPWR
16-Bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B RAM, Comparator 20-TSSOP -40 to 85
MSP430C11x1, MSP430F11x1A
MIXED SIGNAL MICROCONTROLLER
SLAS241I − SEPTEMBER 1999 − REVISED DECEMBER 2008
Low Supply Voltage Range 1.8 V to 3.6 V Ultralow Power Consumption
− Active Mode: 160 μA at 1 MHz, 2.2 V
− Standby Mode: 0.7 μA
− Off Mode (RAM Retention): 0.1 μA Wake-Up From Standby Mode in
Less Than 6 μs 16-Bit RISC Architecture, 125 ns
Instruction Cycle Time Basic Clock Module Configurations:
− Various Internal Resistors
− Single External Resistor
− 32-kHz Crystal
− High-Frequency Crystal
− Resonator
− External Clock Source 16-Bit Timer_A With Three
Capture/Compare Registers On-Chip Comparator for Analog Signal
Compare Function or Slope
Analog-to-Digital (A/D) Conversion Serial Onboard Programming,
No External Programming Voltage Needed,
Programmable Code Protection by
Security Fuse Family Members Include
MSP430C1101: 1KB ROM, 128B RAM
MSP430C1111: 2KB ROM, 128B RAM
MSP430C1121: 4KB ROM, 256B RAM
MSP430F1101A: 1KB + 128B Flash Memory
128B RAM
MSP430F1111A: 2KB + 256B Flash Memory
128B RAM
MSP430F1121A: 4KB + 256B Flash Memory
256B RAM Available in a 20-Pin Plastic Small-Outline
Wide Body (SOWB) Package, 20-Pin Plastic
Small-Outline Thin Package, 20-Pin TVSOP
(F11x1A only), and 24-Pin QFN For Complete Module Descriptions, Refer
to the MSP430x1xx Family User’s Guide,
Literature Number SLAU049
descriptionThe T exas Instruments MSP430 family of ultralow-power microcontrollers consists of several devices featuring
different sets of peripherals targeted for various applications. The architecture, combined with five low-power
modes is optimized to achieve extended battery life in portable measurement applications. The device features
a powerful 16-bit RISC CPU, 16-bit registers, and constant generators that contribute to maximum code
efficiency. The digitally controlled oscillator (DCO) allows wake-up from low-power modes to active mode in less
than 6 μs.
The MSP430x11x1(A) series is an ultralow-power mixed signal microcontroller with a built-in 16-bit timer,
versatile analog comparator and fourteen I/O pins.
Typical applications include sensor systems that capture analog signals, convert them to digital values, and then
process the data for display or for transmission to a host system. Stand alone radio frequency (RF) sensor front
end is another area of application. The I/O port inputs provide single slope A/D conversion capability on resistive
sensors.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range
from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage
because very small parametric changes could cause the device not to meet its published specifications. These devices have limited
built-in ESD protection.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
