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MRFG35003M6T1
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
The RF GaAs Line������� �������� �����
RF Power Field Effect TransistorDesigned for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications. Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 6 Volts,
IDQ = 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24% 3 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
MOISTURE SENSITIVITY LEVEL(1) For reliable operation, the operating channel temperature should not exceed 150°C.
(2) Simulated.
