| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MRFE6S9200HR3 |
FSL |
N/a |
3000 |
 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRFE6S9200HR3 |
FREESCALE |
N/a |
345 |
|
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
MRFE6S9201HSR5 FREESCALE
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9205HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFG35003M6T1 ,MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRFG350 ..
MRFG35010 ,MRFG35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMTTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case Class A R ..
MRFG35010MT1 ,MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRFG350 ..
MT3S06U ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmZ1IU1O T.nw Nnign Fianna . NF = 1 RAR “1.25:0.1”(Vnm=3V, In=3mA, f-- 2GHz)TT ..
MT3S07FS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S07S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 reNF215dR1.6:02-.v -Whm=3V,In=5mA,f= 2GHz)0.8:.t0.1F—T—fl ..
