| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MRFE6S9125NBR1 |
TO272WB |
N/a |
121 |
 |
N-Channel Enhancement-Mode Lateral MOSFETs |
MRFE6S9125NR1 FSL, N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9130HS FREESCALE
MRFE6S9135HS FREESCALE
MRFE6S9160HS FREESCALE
MRFE6S9200H FREESCALE
MRFE6S9125NBR1 , N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9205HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFG35003M6T1 ,MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRFG350 ..
MT3S05T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent co ..
MT3S06S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 ret0'=1%dTt1.6:02Whm=3V,In=3mA,f= 2GHz)0.8:.t0.1F—T—fl ~3| ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 Il 0.8 i 0.05221C0 T.nw Nnign Fianna . NF = 1 RAR I(Vnm=3V, ..
