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MRF9745T1MOTN/a642avaiHIGH FREQUENCY POWER TRANSISTOR LDMOS FET


MRF9745T1 ,HIGH FREQUENCY POWER TRANSISTOR LDMOS FET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF9745T1/D* **The RF Small Signal Line* * N–Ch ..
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MT3S04AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 IPhhmhh C Shir.C ShirI .Ft-c StSCh I = -flMAXIMUM RATINGS (T ..
MT3S05T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm  Sutable for use in an OSC  Low noise figure NF = 1.4dB  Excellent co ..
MT3S06S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 ret0'=1%dTt1.6:02Whm=3V,In=3mA,f= 2GHz)0.8:.t0.1F—T—fl ~3| ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 Il 0.8 i 0.05221C0 T.nw Nnign Fianna . NF = 1 RAR I(Vnm=3V, ..
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MRF9745T1
HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
-The RF Small Signal Line -
N–Channel Enhancement–Mode MOSFET

Designed for use in low voltage, moderate power amplifiers such as portable
analog and digital cellular radios and PC RF modems. Performance Specifications at 5.8 V, 900 MHz:
Output Power = 30 dBm Min
Power Gain = 10 dB Typ
Efficiency = 50% Min Guaranteed Ruggedness at Load VSWR = 20:1 New Plastic Surface Mount Package Available in Tape and Reel Packaging.
T1 Suffix = 1,000 Units per 8 mm, 7 inch Reel Device Marking = 9745
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
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by MRF9745T1/D
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SEMICONDUCTOR TECHNICAL DATA
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