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Partno	Mfg	Dc	Qty	Available	Descript
MRF9210	FREESCAL	N/a	12	avai	MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET

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MRF9210
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
The RF MOSFET Line
RF Power Field Effect T ransistorN- Channel Enhancement- Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large -signal, common source amplifier
applications in 26 volt base station equipment. Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 16.5 dB
Efficiency — 25.5%
Adjacent Channel Power —
750 kHz: -46.2 dBc @ 30 kHz BW
1.98 MHz: -60 dBc @ 30 kHz BW Internally Matched, Controlled Q, for Ease of Use Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz,
40 Watts Avg. N-CDMA Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.