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MRF9135LN/a110avaiMRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs
MRF9135LfreescaleN/a800avaiMRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs
MRF9135LFREE/MOTN/a125avaiMRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs


MRF9135L ,MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9135L/DThe RF Sub–Micron MOSFET Line ..
MRF9135L ,MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF917T1 ,LOW NOISE HIGH FREQUENCY TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal Line** ** * * ..
MRF9180 ,MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9180/DThe RF Sub–Micron MOSFET Line ..
MRF9210 ,MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFETTHERMAL CHARACTERISTICSCharacteristic Symbol Value (1) UnitThermal Resistance, Junction to Case R 0 ..
MRF9210R3 ,880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
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MRF9135L
MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs
The RF Sub–Micron MOSFET Line
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N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment. Typical N–CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA
IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
750 kHz: –47 dBc @ 30 kHz BW Internally Matched, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
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