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MRF9130LFREE/MOTN/a8avaiMRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs
MRF9130LMOTOROLA ?N/a19avaiMRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs


MRF9130L ,MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9130L/DThe RF Sub–Micron MOSFET Line ..
MRF9130L ,MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF9135L ,MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.6 °C/ ..
MRF9135L ,MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9135L/DThe RF Sub–Micron MOSFET Line ..
MRF9135L ,MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF917T1 ,LOW NOISE HIGH FREQUENCY TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal Line** ** * * ..
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MRF9130L
MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs
The RF Sub–Micron MOSFET Line
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N–Channel Enhancement–Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large–signal, common–source amplifier applica-
tions in 28 volt base station equipment. Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
Output Power @ P1dB — 135 Watts
Power Gain — 16.5 dB @ 130 Watts Output Power
Efficiency — 48% @ 130 Watts Output Power Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band,
130 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
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