MRF840 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATA by MRF840/DThe RF Line ** *. . . designed for 12 ..
MRF847 ,RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF857S ,NPN silicon RF power transistorELECTRICAL CHARACTERISTICSCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSCollector–Emitte ..
MRF859S ,NPN SILICON RF POWER TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF859/DThe RF Line * ** *Designed for 24 Volt ..
MRF891 ,RF POWER TRANSISTORS NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF899 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF899/DThe RF Line ** *Designed for 26 Volt U ..
MT2-C93422 , The Best Relaytion
MT312C , Satellite Channel Decoder
MT3170BE , Wide Dynamic Range DTMF Receiver
MT3170BE , Wide Dynamic Range DTMF Receiver
MT35212AE , BELL 212A/CCITT V.22 Modem Filter
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MRF840
RF POWER TRANSISTOR NPN SILICON
The RF Line- -.. designed for 12.5 volt UHF large–signal, common–base amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
806–960 MHz. Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 10 Watts
Power Gain = 6.0 dB Min
Efficiency = 50% Min Series Equivalent Large–Signal Characterization Internally Matched Input for Broadband Operation Tested for Load Mismatch Stress at All Phase Angles with 20:1 VSWR @
15.5 Volt Supply and 50% RF Overdrive Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration Silicon Nitride Passivated
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
OFF CHARACTERISTICSNOTES: (continued) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
