MRF652 ,RF POWER TRANSISTORS NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF652/DThe RF Line ** Designed for 12.5 Vdc U ..
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MRF652
RF POWER TRANSISTORS NPN SILICON
The RF Line- -
Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial
and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics
Output Power = 5.0 Watts
Minimum Gain = 10 dB
Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB Series Equivalent Large–Signal Characterization Gold Metallized, Emitter Ballasted for Long Life and Reliability Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
