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MRF5S21150SMOTN/a3avaiRF POWER FIELD EFFECT TRANSISTORS


MRF5S21150S ,RF POWER FIELD EFFECT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Value (1)(2) UnitThermal Resistance, Junction to Case ..
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MRF5S21150S
RF POWER FIELD EFFECT TRANSISTORS
The RF MOSFET Line
RF Power Field Effect T ransistorsN- Channel Enhancement- Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN- PCS/cellular radio and WLL
applications. Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHzand f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probabilityon CCDF. Output Power — 33 Watts Avg.Power Gain — 12.5 dBEfficiency — 25%IM3 — -37 dBcACPR — -39 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CWOutput Power Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Qualified Up to a Maximum of 32 VDD Operation In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS

(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
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