MRF5015 ,N-CHANNEL BROADBAND RF POWER FETTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 3.5 °C/ ..
MRF5035 ,N-CHANNEL BROADBAND RF POWER FET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5035/DThe RF MOSFET Line** ** ** * ** *N–Cha ..
MRF5035 ,N-CHANNEL BROADBAND RF POWER FETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF5211LT1 ,HIGH-FREQUENCY TRANSISTOR PNP SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF Line ** * **Designed primar ..
MRF544 , RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF544 , RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MT28F400B5 , FLASH MEMORY
MT28F400B5 , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MRF5015
N-CHANNEL BROADBAND RF POWER FET
The RF MOSFET Line -
N–Channel Enhancement–ModeDesigned for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment. Guaranteed Performance at 512 MHz, 12.5 Volts
Output Power — 15 Watts
Power Gain — 10 dB Min
Efficiency — 50% Min Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
OFF CHARACTERISTICS(continued)
Order this document
by MRF5015/D-
SEMICONDUCTOR TECHNICAL DATA
