MRF373A ,MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF373A/DThe RF MOSFET Line ..
MRF377 ,MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF377/ ..
MRF406 , NPN SILICON RF POWER TRANSISTOR
MRF464 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATA by MRF464/DThe RF Line ** *. . . designed primar ..
MRF497 ,NPN SILICON RF POWER TRANSISTORMAXIMUM RATINGS(1)Thm dewce us designed for RF operatlon The total deerce dlssmanon rating applieso ..
MRF5003 ,N-CHANNEL BROADBAND RF POWER FET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET Line** ** ** * ** *N–Cha ..
MT28F128J3 , Q-FLASHTM MEMORY
MT28F128J3FS-12ET , Q-FLASHTM MEMORY
MT28F128J3FS-12ET , Q-FLASHTM MEMORY
MT28F128J3FS-15 , Q-FLASHTM MEMORY
MT28F128J3FS-15 , Q-FLASHTM MEMORY
MT28F128J3FS-15ET , Q-FLASHTM MEMORY
MRF373A
MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
The RF MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment. Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60% 100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW Integrated ESD Protection Excellent Thermal Stability Characterized with Series Equivalent Large–Signal
Impedance Parameters In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
