MRF325 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF326 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF329 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF338 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF373A ,MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF373A/DThe RF MOSFET Line ..
MRF377 ,MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF377/ ..
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MRF325
BROADBAND RF POWER TRANSISTOR NPN SILICON
The RF Line- -.. designed primarily for wideband large–signal output and driver amplifier
stages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics —
Output Power = 30 Watts
Minimum Gain = 8.5 dB
Efficiency = 54% (Min) Built–In Matching Network for Broadband Operation Using Internal Match-
ing Techniques 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization for High Reliability Applications
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
ON CHARACTERISTICSNOTE: (continued) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
