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Partno Mfg Dc Qty AvailableDescript
MRF2947AT2ONN/a9000avaiLOW NOISE TRANSISTORS
MRF2947RAT1ONN/a30000avaiLOW NOISE TRANSISTORS
MRF2947RAT1MOTOROLAN/a18000avaiLOW NOISE TRANSISTORS
MRF2947ONN/a2441avaiLOW NOISE TRANSISTORS
MRF2947AT1MOTOROLAN/a9000avaiLOW NOISE TRANSISTORS


MRF2947RAT1 ,LOW NOISE TRANSISTORS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF Line * ** **Motorola’s MRF2947 ..
MRF2947RAT1 ,LOW NOISE TRANSISTORS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF Line * ** **Motorola’s MRF2947 ..
MRF3095 ,MICROWAVE LINEAR POWER TRANSISTORS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF Line** * ** Designed for Class ..
MRF325 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF326 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF329 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F016S5 , 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY
MT28F016S5VG-9 , 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY
MT28F128J3 , Q-FLASHTM MEMORY


MRF2947-MRF2947AT1-MRF2947AT2-MRF2947RAT1
LOW NOISE TRANSISTORS
The RF Line- -
Motorola’s MRF2947 device contains two high performance, low–noise NPN
silicon bipolar transistors. This device has two 941 die housed in the high
performance six leaded SC–70ML package; yielding a 9 GHz current
gain–bandwidth product.
The RF performance at levels of 1 volt and 1 mA makes the MRF2947 well
suited for low–voltage, low–current, front–end applications such as paging,
cellular, GSM, DECT, CT2 and other portable wireless systems. The MRF2947
is fully ion–implanted with gold metallization and nitride passivation for
maximum device reliability, performance and uniformity. Low Noise Figure, NF = 1.5 dB (Typ) @ 1 GHz @ 5 mA High Current Gain–Bandwidth Product, ft = 9 GHz (Typ) @ 6 Volts, 15 mA Maximum Stable Gain, 18 dB @ 1 GHz @ 5 mA Output Third Order Intercept, OIP3 = +27 dBm Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel
T2 Suffix = 3,000 Units per 8 mm, 7 inch Reel (reverse device
orientation in tape)
MAXIMUM RATINGS
DEVICE MARKINGS

(1) To calculate the junction temperature use TJ = PD x RθJC + TC. The case temperature is measured on collector lead adjacent to the package
body.
(2) IC — Continuous (MTBF > 10 years).
Order this document
by MRF2947/D
-
SEMICONDUCTOR TECHNICAL DATA
C1
STYLE 16 C1
STYLE 17
MRF2947AT1,T2 MRF2947RAT1,T2
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