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MRF21045LR3FREESCALEN/a5avaiRF Power Field Effect Transistors
MRF21045LSR3FREESCALEN/a1052avai2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFET


MRF21045LSR3 ,2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF21060 ,MRF21060, MRF21060R3, MRF21060SR3 2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.02 °C ..
MRF21060SR3 ,RF Power Field Effect Transistors MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF2106 ..
MRF21085 ,MRF21085, MRF21085R3, MRF21085SR3, MRF21085LSR3 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.78 °C ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21090/DThe RF Sub–Micron MOSFET Line ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY


MRF21045LR3-MRF21045LSR3
RF Power Field Effect Transistors
The RF MOSFET Line
RF Power Field Effect T ransistorsN- Channel Enhancement- Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN- PCS/cellular radio and WLL
applications. Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidthat f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probabilityon CCDF. Output Power — 10 Watts Avg.Efficiency — 23.5%Gain — 15 dBIM3 — -37.5 dBcACPR — -41 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
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